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Datasheet NJW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 196 | NJW0281G | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
NJW0281G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G
APPLICATIONS ·Designed for high fidelity audio amplifier and
other linear |
 Inchange Semiconductor |
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| 195 | NJW0281G | (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high f |
 ON Semiconductor |
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| 194 | NJW0302G | (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high f |
ON Semiconductor |
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| 193 | NJW1102 | DOLBY PRO LOGIC SURROUND DECODER
NJW1102 MEMO
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the produ |
 New Japan Radio |
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