Datasheet NEL2012F03-24 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NEL2012F03-24	NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast	NEC

NEL2012F03 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NEL2012F03-24	NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corpor	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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