Datasheet NE5534N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
33	NE5531079A	7.5V OPERATION SILICON RF POWER LDMOS FET DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies a	Renesas
32	NE5531079A	SILICON POWER MOS FET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufact	California Eastern Labs
31	NE5532	NE5532x SA5532x Dual Low-Noise Operational Amplifiers (Rev. J)	Texas Instruments
30	NE5532	Internally-compensated dual low noise operational amplifier INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept 29 Philips Semiconductors Philips Semiconductors Product specification Internally-compensated dual low noise operational amplifier NE/SA/SE5532/	Philips

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Número de pieza	Descripción	Fabricantes	PDF
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