No | Part number | Description ( Function ) | Manufacturers | |
6 | NE202 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
|
5 | NE20248 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
|
4 | NE20283A | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
|
3 | NE202930 | Silicon NPN Epitaxial High Frequency Transistor PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz applications R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 APPLICATIONS • LNA (Low Noise Ampl |
Renesas |
|
2 | NE202XX | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
|
1 | NE202XX-1.4 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |