pdf datasheet site - dataSheet39.com

NCE PDF Datasheet

The NCE is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
325 NCE-xxx
Crystal Clock Oscillator

SaRonix
SaRonix
pdf
324 NCE0102Z
N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design

NCE Power Semiconductor
NCE Power Semiconductor
pdf
323 NCE0106R
NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for

NCE Power Semiconductor
NCE Power Semiconductor
pdf
322 NCE0106Z
NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE0106Z NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for

NCE Power Semiconductor
NCE Power Semiconductor
pdf
321 NCE0108AS
N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE0108AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ) ● Special process technology f

NCE Power Semiconductor
NCE Power Semiconductor
pdf
320 NCE0110AK
N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140mΩ @ VGS=4.5V (Typ

NCE Power Semiconductor
NCE Power Semiconductor
pdf

[1]     [2]     [3]     [4]     [5]     [6]     [7]     >>>.....[55] 

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


Share Link


DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.


Sitemap Link

Index :     1N    2SC    74H    AD    BC    IRF    

  LM    TD    New    Sitemap    NCE



DataSheet39.com     |   2020    |

  Privacy Policy   |   Contact Us