No | Part number | Description ( Function ) | Manufacturers | |
325 | NCE-xxx | Crystal Clock Oscillator |
SaRonix |
|
324 | NCE0102Z | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design |
NCE Power Semiconductor |
|
323 | NCE0106R | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for |
NCE Power Semiconductor |
|
322 | NCE0106Z | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0106Z NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for |
NCE Power Semiconductor |
|
321 | NCE0108AS | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0108AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ) ● Special process technology f |
NCE Power Semiconductor |
|
320 | NCE0110AK | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140mΩ @ VGS=4.5V (Typ |
NCE Power Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |