No | Part number | Description ( Function ) | Manufacturers | |
1 | N0603N | N-CHANNEL MOSFET Preliminary Data Sheet N0603N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High |
Renesas |
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Recommended search results related to N0603N |
Part No | Description ( Function) | Manufacturers | |
H7N0603DL | Silicon N Channel MOS FET High Speed Power Switching H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.2.00 Jan.26.2005 Features • Low on - resistance RDS (on) = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: D |
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H7N0603DS | Silicon N Channel MOS FET High Speed Power Switching H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.2.00 Jan.26.2005 Features • Low on - resistance RDS (on) = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: D |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |