DataSheet.es    


Datasheet MT5100 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MT5100(MT51xx) PICO AMP LOW LEAKAGE DIODES

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c
Microsemi Corporation
Microsemi Corporation
diode


MT5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MT55 WATT DC/DC CONVERTER

MT5 5 WATT DC/DC CONVER TER SINGLE & MULTIPLE OUTPUTS ELECTRICAL SPECIFICATIONS All specifications are typical at nominal input, full load INPUT SPECIFICATIONS Input Voltage Range........................ 2:1 Wide Range Input OUTPUT SPECIFICATIONS Ripple Noise..................
ETC
ETC
converter
2MT5032800kHz Synchronous Step-up Converter

M3TEK Preliminary Datasheet MT5032 800kHz Synchronous Step-up Converter with 5.5A Switches DESCRIPTION The MT5032 devices provide a power supply solution for products powered by either a one-cell Li-Ion or Li-polymer battery. The converter generates a stable output voltage that is either adjuste
M3TEK
M3TEK
converter
3MT5033800kHz Synchronous Step-up Converter

M3TEK Preliminary Datasheet MT5033 800kHz Synchronous Step-up Converter with 6A Switches DESCRIPTION The MT5033 devices provide a power supply solution for products powered by either a one-cell Li-Ion or Li-polymer battery. The converter generates a stable output voltage that is either adjusted
M3TEK
M3TEK
converter
4MT5060N-Channel Power MOSFET, Transistor

MT5060 N-Channel Power® MOSFET MOS-TECH Semiconductor Co.,LTD MT5060 N-Channel Power® MOSFET 60 V, 50 A, 12.5 mΩ Features „ Max rDS(on) = 12.5 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ Termination
MOS-TECH
MOS-TECH
mosfet
5MT5060AN-Channel Power MOSFET, Transistor

MT5060A N-Channel Power® MOSFET MOS-TECH Semiconductor Co.,LTD MT5060A N-Channel Power® MOSFET 60 V, 50 A, 11.2 mΩ Features „ Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 12.4 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ Terminati
MOS-TECH
MOS-TECH
mosfet
6MT506MV5Human Machine Interface

MT506MV5 Human Machine Interface with 5.6" TFT LCD display ◆ 特征 z 5.6" 320x234 256 色 TFT LCD z Intel® Xscale PXA255 200MHz 处理器 z 自带配方卡和实时时钟 z 前面板符合 NEMA4/IP65 防护等级 z LED 背光灯 ◆ 简介 MT500 系列触摸屏继承了传统人机界面的优
ETC
ETC
data
7MT50N03N-Channel Power MOSFET, Transistor

茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.,LTD. MT50N03 N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) T
MOS-TECH
MOS-TECH
mosfet
8MT50P03P-Channel Power MOSFET

茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT50P03 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Ty
MOS-TECH
MOS-TECH
mosfet
9MT5100(MT51xx) PICO AMP LOW LEAKAGE DIODES

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c
Microsemi Corporation
Microsemi Corporation
diode



Esta página es del resultado de búsqueda del MT5100. Si pulsa el resultado de búsqueda de MT5100 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap