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Datasheet MT4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 307 | MT400 | Diode ( Rectifier ) |
 American Microsemiconductor |
 |
| 306 | MT40A1G4 | DDR4 SDRAM DDR4 SDRAM
MT40A1G4
MT40A512M8
MT40A256M16
Features
• VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85° |
 Micron |
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| 305 | MT40A256M16 | DDR4 SDRAM DDR4 SDRAM
MT40A1G4
MT40A512M8
MT40A256M16
Features
• VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85° |
Micron |
|
| 304 | MT40A512M8 | DDR4 SDRAM DDR4 SDRAM
MT40A1G4
MT40A512M8
MT40A256M16
Features
• VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85° |
Micron |
|
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