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MRF555 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
4 MRF555
Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro

New Jersey Semiconductor
New Jersey Semiconductor
pdf
3 MRF555
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability DESCRIPTION:

Microsemi
Microsemi
pdf
2 MRF555
NPN SILICON RF TRANSISTOR

MRF555 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCBO 30 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W PACKAGE STYLE MILLIME

Advanced Semiconductor
Advanced Semiconductor
pdf
1 MRF555
NPN SILICON RF LOW POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) • Cost Effective PowerMacro Package • El

Motorola
Motorola
pdf


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