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MPSH10RLRA PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
10 MPSH10
VHF/UHF Transistors NPN Silicon

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol

ON Semiconductor
ON Semiconductor
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9 MPSH10
RF TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10L-x-T92-K MPSH10G-x-T92-K Note: Pin Assignment:

UTC
UTC
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8 MPSH10
NPN Silicon Planar Epitaxial Transistor

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.3 NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base

CDIL
CDIL
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7 MPSH10
NPN RF TRANSISTORS

MPSH10 MPSH11 SILICON NPN RF TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base V

Central Semiconductor
Central Semiconductor
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6 MPSH10
NPN RF Transistor

MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 4

Fairchild Semiconductor
Fairchild Semiconductor
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5 MPSH10
NPN 1 GHz general purpose switching transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES • Low cost • High power gain. DESCRIPTION Silic

NXP
NXP
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