No | Part number | Description ( Function ) | Manufacturers | |
43 | MIP251-10 | MIP25x-10 /16-IQ MIP25x-10,16-IQ GENERAL INFORMATION pitch: housing height: housing depth: dimensional class: wire section: clamp opening size: wire stripping: operating temperature: 10,16 mm 12,50 mm 12.5 mm medium 2.5 mm² / 14 AWG 2.8 × 2.5 mm max 8 mm -40°C ÷ +130°C ELECTRICAL CHARACTERISTICS current: voltage: test voltage: 24A 750V 3 kVrms/60s MECHANICAL CHARACTERISTICS screw: M |
euroclamp |
|
42 | MIP252-10 | MIP25x-10 /16-IQ MIP25x-10,16-IQ GENERAL INFORMATION pitch: housing height: housing depth: dimensional class: wire section: clamp opening size: wire stripping: operating temperature: 10,16 mm 12,50 mm 12.5 mm medium 2.5 mm² / 14 AWG 2.8 × 2.5 mm max 8 mm -40°C ÷ +130°C ELECTRICAL CHARACTERISTICS current: voltage: test voltage: 24A 750V 3 kVrms/60s MECHANICAL CHARACTERISTICS screw: M |
euroclamp |
|
41 | MIP281 | Silicon MOS type integrated circuit 保 保守 守予 最htt新p:の//一情w括w報定wし.はs品てeホ種m保iー、c守oム保n廃.ペp守止aー品nとジa種s表をo、n記iごc廃.し覧c予oて.くj定いpだ品まさ種すい、。。廃品種を廃止13.5±0.3 MIP281 MOS (IPD) s • MOS FET CMOS • (85 VAC ∼ 274 VAC) •( ) • s • • AC • etc. ( ) s Ta=25°C VD 700 V VB 7 V VF |
Panasonic |
|
40 | MIP289 | Silicon MOS type integrated circuit (IPD) MIP289 MOS I • • , • IPD • 150 µA , , , IPD 1 2 3 4 6.3±0.2 Unit : mm +0 0.25 –0.05 MOSFET CMOS , 9.4±0.3 8 7 5 .10 7.62±0.25 3.4±0.3 3.80±0.25 2.54±0.25 • • AC • (∼ 60 W) 0.5±0.1 1.2±0.25 (2,3,7PIN) I Ta = 25°C ± 3°C VD VB VF ID IDP Tch Tstg 700 7 5 280 420 150 −55 ∼ +150 V V V mA mA °C °C : MIP289 I |
Panasonic |
|
39 | MIP2C10MP | Silicon MOS type integrated circuit (IPD) MIP2C10MP MOS ■ • : 80% • • ) 8 Unit : mm (100 VAC : 20 mW, 9.4±0.3 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ( − 12 ) ■ • • AC ( ) 1 2 3 4 2.54±0.25 0.5±0.1 VD VCC VDD CL VCC VDD VFB VCL ID Tch Tstg 700 45 8 8 8 350 150 −55 ∼ +150 V V V V V mA °C °C 1.2±0.25 (2,3,7PIN) 1 : VDD 2 : FB 3 : CL (1,4,5,8PIN) 4 : VCC 5 : Drain 7 : Sou |
Panasonic |
|
38 | MIP2C2 | High-Performance IPD for Battery Chaegers ( DataSheet : ) r Undement p lo e Dev Saves power during standby, enhances efficiency MIP2C2 High-Performance IPD for Battery Chargers Unit : mm +0 0.25 -0.05 I Overview MIP2C2 is a high-performance IPD designed for 7W battery chargers. It features built-in protection circuits necessary for compact power source charger circuitry. This allows a significan |
Matsushita |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |