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MIP2E4DMY PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 MIP2E4DMY
Silicon MOS type integrated circuit

(IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 –0.2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.72 2.4 0.1 150 −55 ∼ +150 V V A A A °C °C 2.54±0.3 5.08±0.5 1 2

Panasonic Semiconductor
Panasonic Semiconductor
pdf

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It can be published by the manufacturer to help people choose products or to help use the products.


MIP2E4D Data sheets

Part No Description ( Function) Manufacturers PDF
MIP2E4D   High-Performance IPD for Battery Chaegers

IPD I IPD (MIP022X) IPD PWM 60 W IPD I G ( 12 V/3 A : 100 VAC : 100 VAC (MIP022X) : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 G 0.3 W IPD MIP022X G I MOS FET VDSS MIP2E1D MIP2E2D MIP2E3D MIP2E4D MIP2E5D MIP2E7D ∼7W ∼ 10 W 10 W ∼ 20 W 15 W ∼ 30 W 20 W ∼ 40

Matsushita
Matsushita
datasheet pdf
MIP2E4DMY   Silicon MOS type integrated circuit

(IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 –0.2 0.8±0.1 VD VC ID I

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf



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