No | Part number | Description ( Function ) | Manufacturers | |
4 | MIP2E1D | High-Performance IPD for Battery Chaegers I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 IPD I MIP2E1D MIP2E2D MIP2E3D MIP2E4D MIP2E5D MIP2E7D ∼7W ∼ 10 W 10 W ∼ 20 W 15 W ∼ 30 W 20 W ∼ 40 W 40 W ∼ 60 W VDSS 700 V MOS FET ILIMIT fOSC 0.4 A 0.5 A 1.0 A 1.5 A TO-220-A1/ DIP8-A1( |
Matsushita |
|
3 | MIP2E1DMC | Silicon MOS type integrated circuit (IPD) MIP2E1DMC ( MOS I • • ) Unit : mm (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 3.0±0.5 0 to 0.5 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 I Ta = 25°C ± 3°C VD VC ID IDP IC Tch Tstg 700 10 0.43 0.61 0.1 150 −55 ∼ +150 V V A A A °C °C 0 to 0.3 (10.2) (8.9) 1 2 3 1 : Control 2 : Source 3 : Drain (2.1) (6.4) (1.4) TO-220C-G1 Package : MIP2E1DMC http://www.DataShee |
Panasonic |
|
2 | MIP2E1DMS | Silicon MOS-type integrated circuit インテリジェントパワーデバイス (IPD) MIP2E1DMS シリコン MOS 形集積回路 特 長 軽負荷時の消費電力を大幅に削減 各種保護回路機能内蔵によりリアルタイムの保護が可能 用 途 スイッチング電源制御用 絶対最大定格 Ta = 25°C±3°C 項目 ドレイン電圧 コントロール� |
Panasonic |
|
1 | MIP2E1DMU | Silicon MOS-type integrated circuit MIP2E1DMU MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 VC 10 ID 0.43 IDP 0.61 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ • U-G4 • 1: Control 2: Source 3: Drain ■ : MIP2E1D ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00036BJD 3 Drain MOSFET 2 Source 1 MIP2E1DMU ■ TC = 25°C ± 2°C PWM / ) *: * * fOSC MA |
Panasonic |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |