No | Part number | Description ( Function ) | Manufacturers | |
1 | MHPA18010N | CDMA Band RF Linear LDMOS Amplifier Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity chara |
Freescale Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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PTF180101 | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellen |
Infineon Technologies AG |
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PTF180101S | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellen |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |