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Datasheet ME9435 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ME9435 | 30V P-Channel Enhancement Mode MOSFET ME9435
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par |  Matsuki | mosfet |
| 2 | ME9435A | 30V P-Channel Enhancement Mode MOSFET ME9435A
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435A is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p | Matsuki | mosfet |
ME9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ME9435 | 30V P-Channel Enhancement Mode MOSFET ME9435
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par Matsuki mosfet | | |
| 2 | ME9435A | 30V P-Channel Enhancement Mode MOSFET ME9435A
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435A is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p Matsuki mosfet | | |
| 3 | ME9926 | Dual N-Channel 2.5-V (G-S) MOSFET Dual N-Channel 2.5-V (G-S) MOSFET
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices a Matsuki mosfet | | |
| 4 | ME9926 | Dual N-Channel High Density Trench MOSFET Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET
ME9926
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
6.0A
28 @ VGS = 4.5V
20V
5.2A
44 @ VGS = 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Ideal for Li ion battery pa  Aonetek Semiconductor mosfet | | |
| 5 | ME9926-G | Dual N-Channel 20V (D-S) MOSFET Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Matsuki mosfet | |
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