| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | ME4542 | N- and P-Channel 30-V (D-S) MOSFET ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicat |
 Matsuki |
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Search Result Starting with 'ME45' |
| Part No | Description ( Function) | Manufacturers | |
| ME45P04-G | P-Channel 40-V (D-S) MOSFET ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-st |
Matsuki |
|
| ME45P04-G | P-Channel 40-V (D-S) MOSFET ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resi |
 ETC |
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| ME45P04 | P-Channel 40-V (D-S) MOSFET ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-st |
Matsuki |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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| 6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA | |||