ME4542 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | ME4542 | N- and P-Channel 30-V (D-S) MOSFET ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicat |
 Matsuki |
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ME45 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| ME45P04 | P-Channel 40-V (D-S) MOSFET ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-st |
Matsuki |
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| ME45P04-G | P-Channel 40-V (D-S) MOSFET ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-st |
Matsuki |
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| ME45P04-G | P-Channel 40-V (D-S) MOSFET ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resi |
 ETC |
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