No | Part number | Description ( Function ) | Manufacturers | |
1 | ME4410A | N-Channel 30-V (D-S) MOSFET ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note |
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Search Result Starting with 'ME441' |
Part No | Description ( Function) | Manufacturers | |
ME4411-G | P-Channel 30V (D-S) MOSFET P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
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ME4411 | P-Channel 30V (D-S) MOSFET P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
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ME4410B-G | N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-sta |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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LM317 | This is a popular adjustable voltage regulator. |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |