No | Part number | Description ( Function ) | Manufacturers | |
119 | MDD06N100 | N-Channel MOSFET MDD06N100 – Single N-Channel Trench MOSFET 60V MDD06N100 Single N-channel Trench MOSFET 60V, 50A, 10mΩ ㄹ General Description The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD06N100 is suitable device for Synchronous Rectification For Server and general |
MagnaChip |
|
118 | MDD1051 | Single N-channel Trench MOSFET MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchronous Rectification For Server and general purpo |
MagnaChip |
|
117 | MDD142 | HIgh Power Diode Modules MDD 142 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V 2 1 3 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 3 1 2 MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1 Symbol IFRMS IFAVM IFSM Test Conditions TVJ = TVJM TC = 100°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = |
IXYS Corporation |
|
116 | MDD142-08N1 | HIgh Power Diode Modules MDD 142 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1 312 2 1 3 Symbol IFRMS I FAVM IFSM òi2dt TVJ TVJM Tstg V ISOL Md Weight Symbol IR VF VT0 r T QS IRM RthJC RthJK dS dA a Test Condit |
IXYS Corporation |
|
115 | MDD142-12N1 | HIgh Power Diode Modules MDD 142 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1 312 2 1 3 Symbol IFRMS I FAVM IFSM òi2dt TVJ TVJM Tstg V ISOL Md Weight Symbol IR VF VT0 r T QS IRM RthJC RthJK dS dA a Test Condit |
IXYS Corporation |
|
114 | MDD142-14N1 | HIgh Power Diode Modules MDD 142 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1 312 2 1 3 Symbol IFRMS I FAVM IFSM òi2dt TVJ TVJM Tstg V ISOL Md Weight Symbol IR VF VT0 r T QS IRM RthJC RthJK dS dA a Test Condit |
IXYS Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |