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MBRS340 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
9 MBRS340
SCHOTTKY RECTIFIER

Bulletin PD-20585 rev. E 07/04 MBRS340TR SCHOTTKY RECTIFIER 3 Amp IF(AV) = 3.0Amp VR = 40V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ t p= 5 µs sine VF TJ @3.0Apk,TJ=125°C range Description/ Features Units A V A V °C The MBRS340TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop

International Rectifier
International Rectifier
pdf
8 MBRS340
SCHOTTKY POWER RECTIFIER

MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. F

Fairchild Semiconductor
Fairchild Semiconductor
pdf
7 MBRS340
SCHOTTKY BARRIER RECTIFIERS

MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as

ON Semiconductor
ON Semiconductor
pdf
6 MBRS340G
(MBRS320G - MBRS3200G) 3.0A Surface Mount Schottky Barrier Rectifiers

Chip Schottky Barrier Rectifier MBRS320G THRU MBRS3200G 3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabili

American First Semiconductor
American First Semiconductor
pdf
5 MBRS340P
Surface Mount Schottky Power Rectifier

MBRS320P, MBRS330P, MBRS340P Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection

ON Semiconductor
ON Semiconductor
pdf
4 MBRS340T3
Surface Mount Schottky Power Rectifier

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS340T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectifi

Motorola
Motorola
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