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MBRS140 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
8 MBRS140
SCHOTTKY POWER RECTIFIER

MBRS140 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. F

Fairchild Semiconductor
Fairchild Semiconductor
pdf
7 MBRS140G
(MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers

Chip Schottky Barrier Rectifier MBRS120G THRU MBRS1200G 1.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabili

American First Semiconductor
American First Semiconductor
pdf
6 MBRS140LT3
Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140LT3/D Advance Information Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high fre

Motorola
Motorola
pdf
5 MBRS140LT3
Surface Mount Schottky Power Rectifier

MBRS140LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

ON Semiconductor
ON Semiconductor
pdf
4 MBRS140T3
Surface Mount Schottky Power Rectifier

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectifi

Motorola
Motorola
pdf
3 MBRS140T3G
Surface Mount Schottky Power Rectifier

MBRS140T3G, SBRS8140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free whee

ON Semiconductor
ON Semiconductor
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