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MBRS130L PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
6 MBRS130L
SCHOTTKY RECTIFIER

Bulletin PD-20588 rev. E 07/04 MBRS130LTR SCHOTTKY RECTIFIER 1 Amp IF(AV) = 1.0 Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp= 5 µs sine VF TJ @ 1.0Apk, TJ= 125°C range Description/ Features The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foo

International Rectifier
International Rectifier
pdf
5 MBRS130L
1.0 Ampere Schottky Power Rectifiers

MBRS130L MBRS130L Features • • • Compact surface mount package with J-bend leads. 1.5 Watt Power Dissipation package. 1.0 Ampere, forward voltage less than 395 mv. 0.220 (5.588) 0.200 (5.080) 0.083 (2.108) 0.075 (1.905 ) 0.185 (4.699) 0.160 (4.064) 2 1 0.155 (3.937) 0.130 (3.302) Ordering • 13 inch reel (330 mm); 12 mm Tape; 3,000 units per reel. SMB/DO-214AA COLO

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 MBRS130LT3
Schottky Power Rectifier(Surface Mount Power Package)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS130LT3/D Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage

Motorola
Motorola
pdf
3 MBRS130LT3
Schottky Power Rectifier

MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity prote

ON Semiconductor
ON Semiconductor
pdf
2 MBRS130LT3G
Schottky Power Rectifier

MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

ON Semiconductor
ON Semiconductor
pdf
1 MBRS130LTR
SCHOTTKY RECTIFIER

Bulletin PD-20588 rev. E 07/04 MBRS130LTR SCHOTTKY RECTIFIER 1 Amp IF(AV) = 1.0 Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp= 5 µs sine VF TJ @ 1.0Apk, TJ= 125°C range Description/ Features The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foo

International Rectifier
International Rectifier
pdf


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