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No Part number Description ( Function ) Manufacturers PDF
83 MA700
Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA111 MA700, MA700A Silicon epitaxial planer type For ordinary wave detection For super high speed switching COLORED BAND INDICATES CATHODE Unit : mm ø0.45 max. 1 0.2max. 13 min. s Features q Low q Temperature q Extremely q DO-34 coefficient of forward characteristic is small. low reverse current I R 0.2 max. 13 min. (DHD) envelope, enabli

Panasonic
Panasonic
pdf
82 MA700
SCHOTTKY BARRIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 MA700, MA700A PRV : 15 - 30 V Io : 30 mA FEATURES : * Low forward voltage VF * Small temperature coefficent of forward characterisble * Small reverse current IR * High-densitty mounting ( 5mm pich insertion) is possible * Pb / RoHS Free SCHOTTKY BARRIER DIODES DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min.

EIC
EIC
pdf
81 MA7000
Silicon planar type

Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. I Features Cathode Colored band indicates Vz classification Parameter Repetitive peak forward current Total power dissipation*1 Non-repetitive reverse surge power dissipat

Panasonic
Panasonic
pdf
80 MA7000
Silicon Planar Type

Zener Diodes MAZ7000 Series (MA7000 Series) Silicon planar type Unit: mm For stabilization of power supply s Features φ 0.60±00.5 • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. Colored band indicatesVz classification 5.0 max. 27 min. φ3.0 max. s Absolute Maximum Ratings Ta = 25°C Parameter Repetiti

Panasonic
Panasonic
pdf
79 MA7001
Radiation Hard 512x9 Bit FIFO

MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 DS3519-5.0 January 2000 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to ver

Dynex
Dynex
pdf
78 MA700A
Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA111 MA700, MA700A Silicon epitaxial planer type For ordinary wave detection For super high speed switching COLORED BAND INDICATES CATHODE Unit : mm ø0.45 max. 1 0.2max. 13 min. s Features q Low q Temperature q Extremely q DO-34 coefficient of forward characteristic is small. low reverse current I R 0.2 max. 13 min. (DHD) envelope, enabli

Panasonic
Panasonic
pdf



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