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M29W400B PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 M29W400B
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W400T M29W400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P

ST Microelectronics
ST Microelectronics
pdf
2 M29W400BB
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W400BT M29W400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks 44 s s s s PROGRAM/ERASE CONTROLLER

ST Microelectronics
ST Microelectronics
pdf
1 M29W400BT
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W400BT M29W400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks 44 s s s s PROGRAM/ERASE CONTROLLER

ST Microelectronics
ST Microelectronics
pdf


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