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M28F101 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 M28F101
1 Mb FLASH MEMORY

M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufact

STMicroelectronics
STMicroelectronics
pdf

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M28F1 Data sheets

Part No Description ( Function) Manufacturers PDF
M28F102   1 Mbit Flash Memory

Datasheet39.com M28F102 1 Mbit (64Kb x16, Bulk) Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/P

STMicroelectronics
STMicroelectronics
datasheet pdf
M28F101   1 Mb FLASH MEMORY

M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES INTEG

STMicroelectronics
STMicroelectronics
datasheet pdf


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