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M28C16 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 M28C16
16K (2K x 8) PARALLEL EEPROM

M28C16 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION: – Data Polling – Toggle Bit PAGE LOAD TIMER STATUS BIT HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY:

STMicroelectronics
STMicroelectronics
pdf
2 M28C16A
16 Kbit (2K x 8) Parallel EEPROM

M28C16A M28C17A 16 Kbit (2Kb x8) Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output – Data Pollin

STMicroelectronics
STMicroelectronics
pdf
1 M28C16B
16 Kbit (2K x 8) Parallel EEPROM

M28C16B M28C17B 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s Fast Access Time: 90 ns at VCC=5V s Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W s Low Power Consumption s Fast BYTE and PAGE WRITE (up to 64 Bytes) – 3 ms at VCC=4.5 V – 5 ms at VCC=2.7 V s Enhanced Write Detection and Monitoring:

STMicroelectronics
STMicroelectronics
pdf



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