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Datasheet L53 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | L5300GJ | 5V low drop voltage regulator L5300GJ
5 V low drop voltage regulator
Features
Max DC supply voltage Max output voltage tolerance Max dropout voltage Output current
VS ΔV0 Vdp I0
Quiescent current
Iqn
1. Typical value with regulator disabled. 2. Typical value with regulator enabled.
40 V
+/-2%
500 mV
300 mA 5 µA(1) 55 µ |
 STMicroelectronics |
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| 8 | L532 | IGBT phaseleg in ISOPLUS i4-PAC FII 30-06D
IGBT phaseleg
in ISOPLUS i4-PACTM
IC25 = 30 A = 600 V VCES VCE(sat) typ. = 1.9 V
3 5 4
Preliminary data
1
1 2
5
IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = V |
 IXYS Corporation |
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| 7 | L53F3BT | T-1 3/4 (5 MM) INFRA RED EMITTING DIODE Kingbright
Features
!MECHANICALLY !BLUE
®
T-1 3/4 (5mm) INFRA-RED EMITTING DIODE
L53F3BT
AND SPECTRALLY MATCHED
TO THE L51P3C PHOTOTRANSISTOR. TRANSPARENT LENS AVAILABLE HIGH Package Dimensions POWER OUTPUT.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
Notes: 1. All dime |
 ETC |
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| 6 | L53F3BT | T-1 3/4(5mm) in ra-red emitting diode T-1 3/4 (5mm) INFRA-RED EMITTING DIODES
L53F3C L53SF4C L53F3BT L53SF4BT
Features
!MECHANICALLY AND SPECTRALLY MATCHED
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes.
TO THE L51P3C PHOTOTRANSI |
 Kingbright |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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