No | Part number | Description ( Function ) | Manufacturers | |
15 | KF70N06F | N-CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KF70N06P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It’s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 70A (KF70N06P) Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless other |
KEC |
|
14 | KF70N06P | N-CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KF70N06P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It’s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 70A (KF70N06P) Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless other |
KEC |
|
13 | KF776 | NPN Bipolar RF Transistor SMD Type NPN Bipolar RF Transistor BF776 (KF776) TTrraannssiissttoorrss Ƶ Features ƽ High performance low noise amplifier ƽ Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz ƽ For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands ƽ Easy to use standard package with visible leads SOT-343R 2 ±0. |
Kexin |
|
12 | KF7N50D | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATI |
KEC |
|
11 | KF7N50F | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 7A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING |
KEC |
|
10 | KF7N50I | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATI |
KEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |