No | Part number | Description ( Function ) | Manufacturers | |
1 | K9F2G08U0C | 2Gb C-die NAND Flash Rev. 0.2, May. 2010 K9F2G08U0C Advance 2Gb C-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any |
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Recommended search results related to K9F2G08U0C |
Part No | Description ( Function) | Manufacturers | |
K9F2G08U0A | (K9F2G08UxA) Flash Memory K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY EST |
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K9F2G08U0B | FLASH MEMORY K9F2G08B0B K9F2G08U0B Preliminary FLASH MEMORY K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR |
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K9F2G08U0M | FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the dat |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
![]() Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
![]() ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |