No | Part number | Description ( Function ) | Manufacturers | |
3 | K9F2808U0M- | 16M x 8 Bit NAND Flash Memory K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(M |
Samsung semiconductor |
|
2 | K9F2808U0M-YCB0 | 16M x 8 Bit NAND Flash Memory K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(M |
Samsung semiconductor |
|
1 | K9F2808U0M-YIB0 | 16M x 8 Bit NAND Flash Memory K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(M |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |