No | Part number | Description ( Function ) | Manufacturers | |
22 | K9F2808U0 | 16M x 8 Bit NAND Flash Memory K9F2808U0A-YCB0, K9F2808U0A-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128AIT -> K9F2808U0A-YIB0 1. Changed sequential row read opera tion - The |
Samsung semiconductor |
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21 | K9F2808U0A | 16M x 8 Bit NAND Flash Memory K9F2808U0A-YCB0, K9F2808U0A-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128AIT -> K9F2808U0A-YIB0 1. Changed sequential row read opera tion - The Sequential Read 1 and |
Samsung semiconductor |
|
20 | K9F2808U0A- | 16M x 8 Bit NAND Flash Memory K9F2808U0A-YCB0, K9F2808U0A-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128AIT -> K9F2808U0A-YIB0 1. Changed sequential row read opera tion - The Sequential Read 1 and |
Samsung semiconductor |
|
19 | K9F2808U0A-YCB0 | 16M x 8 Bit NAND Flash Memory K9F2808U0A-YCB0, K9F2808U0A-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128AIT -> K9F2808U0A-YIB0 1. Changed sequential row read opera tion - The Sequential Read 1 and |
Samsung semiconductor |
|
18 | K9F2808U0A-YIB0 | 16M x 8 Bit NAND Flash Memory K9F2808U0A-YCB0, K9F2808U0A-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128AIT -> K9F2808U0A-YIB0 1. Changed sequential row read opera tion - The Sequential Read 1 and |
Samsung semiconductor |
|
17 | K9F2808U0B-D | 16M x 8 Bit NAND Flash Memory K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 0.2 Initial issue. K9F2808U0B(3.3V device)’s qualification is finished K9F2808Q0B (1.8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Changed typical program |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |