Datasheet K8A500 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
10	K8A50D	TK8A50D TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500	Toshiba
9	K8A55DA	TK8A55DA TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Charact	Toshiba
8	K8A5615EBA	Flash Memory K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID	Samsung Electronics
7	K8A5615ETA	Flash Memory K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID	Samsung Electronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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