K6T4008U1C-GB10 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | K6T4008U1C-GB10 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA |
 Samsung semiconductor |
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The datasheet is usually used for technical communication to describe technical characteristics of an item or product. |
K6T4008U1C-GB Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| K6T4008U1C-GB70 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
Samsung semiconductor |
|
| K6T4008U1C-GB85 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
Samsung semiconductor |
|
| K6T4008U1C-GB10 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
Samsung semiconductor |
|