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Datasheet K6A650 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K6A60D | TK6A60D TK6A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6A60D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) En |
 Toshiba Semiconductor |
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| 1 | K6A65D | TK6A65D TK6A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6A65D
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = |
Toshiba Semiconductor |
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