Datasheet K6A60DR Equivalent ( PDF )

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K6A Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K6A60D	TK6A60D TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) En	Toshiba Semiconductor	data
2	K6A65D	TK6A65D TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A65D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS =	Toshiba Semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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