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K4115 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K4115
2SK4115

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 3.3max. 2.0 9.0 20.0±0.3 2.0 Ф3.2±0.2 1.0 4.5

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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K41 Data sheets

Part No Description ( Function) Manufacturers PDF
K4111   2SK4111

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current:

Toshiba
Toshiba
datasheet pdf
K4108   2SK4108

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0. 21Ω (typ.)

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
K4145   2SK4145

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42

NEC
NEC
datasheet pdf



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