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Datasheet K41 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | K4100LS | MOSFET ( Transistor ) - 2SK4100LS
Ordering number : ENA0778
2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4100LS
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability H |
 Sanyo Semicon Device |
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| 19 | K4101LS | MOSFET ( Transistor ) - 2SK4101LS
Ordering number : ENA0745
2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4101LS
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of |
 Sanyo |
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| 18 | K4106 | MOSFET ( Transistor ) - 2SK4106 2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) |
 Toshiba |
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| 17 | K4107 | MOSFET ( Transistor ) - 2SK4107 2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
• • • • Low drain−source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 8.5 S ( |
 Toshiba Semiconductor |
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