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No Part number Description ( Function ) Manufacturers PDF
42 K4003
2SK4003

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 Unit: mm 1.5±0.2 z Low drain−source ON-resistance z Low leakage current z Enhancement mode : RDS (ON) = 1.7 Ω (typ.) 5.2±0.2 0.6 MAX. : Vth = 2.0~4.0 V (VDS = 10

Toshiba Semiconductor
Toshiba Semiconductor
pdf
41 K4004-01MR
Power MOSFET

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. DRAWN DATE Jan.-31-'05 CHECKED Jan

Fuji
Fuji
pdf
40 K4005-01MR
2SK4005-01MR

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. DRAWN DATE Jan.-31-'05 CHECKED Jan

Fuji Electric
Fuji Electric
pdf
39 K401
Photocoupler

Photocoupler K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K404 has four channels in a 16-pin mini-flat SMD package. FEATURES • Mini-flat

KODENSHI KOREA CORP
KODENSHI KOREA CORP
pdf
38 K4012
2SK4012

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (

Toshiba Semiconductor
Toshiba Semiconductor
pdf
37 K4013
2SK4013

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V,

Toshiba Semiconductor
Toshiba Semiconductor
pdf



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