K3934 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | K3934 | 2SK3934 2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI) 2SK3934 Switching Regulator Applications • • • • Low drain-source ON resistance: R DS (ON) = 0.23ƒ¶ (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID |
 Toshiba Semiconductor |
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K39 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| K3918 | 2SK3918 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state re |
 NEC |
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| K3919 | 2SK3919 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current |
NEC |
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| K3911 | Field Effect Transistor 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications • • • • • Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| |
 Toshiba |
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