No | Part number | Description ( Function ) | Manufacturers | |
13 | K390 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 DYNAMIC IMPEDANCE MAX Zz MAX Zzk @ IZ = 10 mA @ IZ = 1 |
Knox Inc |
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12 | K3903 | MOSFET ( Transistor ) - 2SK3903 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3903 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, |
Toshiba Semiconductor |
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11 | K3911 | Field Effect Transistor 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications • • • • • Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V |
Toshiba |
|
10 | K3918 | MOSFET ( Transistor ) - 2SK3918 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applicat |
NEC |
|
9 | K3919 | MOSFET ( Transistor ) - 2SK3919 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2 |
NEC |
|
8 | K3934 | MOSFET ( Transistor ) - 2SK3934 2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI) 2SK3934 Switching Regulator Applications • • • • Low drain-source ON resistance: R DS (ON) = 0.23ƒ¶ (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |