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K3767 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K3767
2SK3767

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Uni

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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K37 Data sheets

Part No Description ( Function) Manufacturers PDF
K3700   2SK3700

2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: ID

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
K3703   2SK3703

Ordering number : ENN7681 2SK3703 N-Channl Silicon MOSFET 2SK3703 General-Purpose Switching Device Applications Features • • • • Package Dimensions unit : mm 2063A [2SK3703] 10.0 3.2 3.5 7.2 Low ON-resistance. 4V drive. Ultrahigh-speed switching.

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
K3706   2SK3706

Ordering number : ENN7766 2SK3706 2SK3706 Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolu

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf



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