No | Part number | Description ( Function ) | Manufacturers | |
1 | K3570 | MOSFET ( Transistor ) - 2SK3570 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK |
NEC Electronics |
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Recommended search results related to K3570 |
Part No | Description ( Function) | Manufacturers | |
2SK3570 | Switching N-Channel Power MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/D |
NEC Electronics |
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1N3570 | Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
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2N3570 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ TSTG θJC O O PACKAGE STYLE TO- 72 50 mA 30 V 15 V 3.0 V 200 mW @ TC = 25 C -65 C to +2 |
Advanced Semiconductor |
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2SC3570 | NPN SILICON POWER TRANSISTOR |
NEC |
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2SC3570 | Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Designed for swi |
Inchange Semiconductor |
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Vishay |
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