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K3569 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K3569
2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.DataSheet4U

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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K35 Data sheets

Part No Description ( Function) Manufacturers PDF
K3532-01MR   2SK3532-01MR

2SK3532-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators U

Fuji Electric
Fuji Electric
datasheet pdf
K3543   2SK3543

2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) · High forward transfer admittance: |Yfs| =

Toshiba
Toshiba
datasheet pdf
K3559   N-channel enhancement mode MOSFET

Silicon MOSFET 2SK3559 N-channel enhancement mode MOSFET High speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Allowable power Tc = 25 °C *1 dissipation Ta = 25 °C *2 Junction temperature Sto

Panasonic
Panasonic
datasheet pdf



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