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K3565 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K3565
2SK3565

2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute M

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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K35 Data sheets

Part No Description ( Function) Manufacturers PDF
K3568   2SK3568

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μ

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
K3569   2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
K3562   2SK3562

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μ

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf



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