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K3325-S PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
40 K330
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 DYNAMIC IMPEDANCE MAX Zz MAX Zzk @ IZ = 10 mA @ IZ = 1

Knox  Inc
Knox Inc
pdf
39 K3302
Silicon N Channel MOS Type Field Effect Transistor

2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10

Toshiba Semiconductor
Toshiba Semiconductor
pdf
38 K3304
2SK3304

TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 LCD Bias Supply Check for Samples :TPS65170 1 FEATURES 8.6V to 14.7V Input Voltage Range 2.8A Boost Converter Switch Current Limit Boost Converter Output Voltages up to 18.5V Boost and Buck Converter Short-Circuit Protection 1.5A Buck Converter Switch Current Limit Fixed 750kHz Switching Frequency for Buck and Boost Converters Fixe

NEC
NEC
pdf
37 K3306
2SK3306

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching

NEC
NEC
pdf
36 K3310
2SK3310

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Maxi

Toshiba Semiconductor
Toshiba Semiconductor
pdf
35 K3313
2SK3313

2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3313 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications l Fast reverse recovery time l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : trr = 90 ns (typ.) : RDS (ON) = 0.5 Ω (typ.) : |Yfs| = 8.5 S (typ.) Uni

Toshiba Semiconductor
Toshiba Semiconductor
pdf



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