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Datasheet K319 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K319 | N-Channel MOSFET, 2SK319 INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK319
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power Switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
V |  Inchange Semiconductor | data |
| 2 | K319 | N-Channel MOSFET, 2SK319 |  Hitachi Semiconductor | data |
| 3 | K3192 | N-Channel MOSFET, 2SK3192 Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
21.0±0.5
φ 3.2±0.1
15.0±0.2
■ Applications
• PDP |  Panasonic Semiconductor | data |
| 4 | K3199 | N-Channel MOSFET, 2SK3199 2SK3199
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 500 ± 30 ±5 ± 20 30 (Tc = 25ºC) 35 5 150 –55 to +150
External dimensions 1 ...... FM20
(Ta = 25ºC)
Electrical Characteristics
Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS |  Sanken Electric | data |
K31 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K3100G | 3.3V Crystal Clock Oscillators
K3100G Series
3.3V Crystal Clock Oscillators
TTL/CMOS Compatible Tight Symmetry (45/55%) Available Tri-State Option Available ±100ppm Stability Standard - K3100GC Tighter Stabilities Available
±25ppm Stability:- K3100GA ±50ppm Stability:- K3100GB Case Ground for EMI  Champion oscillator | | |
| 2 | K3102-01R | N-Channel MOSFET, 2SK3102-01R w
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Free Datasheet http://www.datash  Fuji Semiconductors data | | |
| 3 | K3113 | N-Channel MOSFET, 2SK3113
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power suppl  NEC data | | |
| 4 | K3114 | N-Channel MOSFET, 2SK3114 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3114 PACKAGE Isolated TO-220
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and design NEC data | | |
| 5 | K3115 | N-Channel MOSFET, 2SK3115
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as swit NEC data | | |
| 6 | K3115B | N-CHANNEL POWER MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORD  Renesas mosfet | | |
| 7 | K3116 | N-Channel MOSFET, 2SK3116 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
OR NEC data | |
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