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K3114 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K3114
2SK3114

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

NEC - K3114 pdf datasheet
NEC
K3114 datasheet pdf

The datasheet is usually used for technical communication to describe technical characteristics of an item or product.
It can be published by the manufacturer to help people choose products or to help use the products.


K31 Data sheets

No Description ( Function) Manufacturers PDF
K3115   2SK3115

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage appli

NEC
NEC
datasheet pdf
K3114   2SK3114

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching charact

NEC
NEC
datasheet pdf
K3116   2SK3116

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power sup

NEC
NEC
datasheet pdf
K3199   2SK3199

2SK3199 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 500 ± 30 ±5 ± 20 30 (Tc = 25ºC) 35 5 150 –55 to +150 External dimensions 1 ...... FM20 (Ta = 25ºC) Electrical Characteristics Symbol V(BR) DSS I GSS I

Sanken Electric
Sanken Electric
datasheet pdf
K3113   2SK3113

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as s

NEC
NEC
datasheet pdf
K3192   2SK3192

Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) 21.0±0.5 φ 3.2±0.1 15.0±0.2 ■

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf


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