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K30N60HS PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K30N60HS
SKW30N60HS

SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedness, temperature stable

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K30N60 Data sheets

Part No Description ( Function) Manufacturers PDF
K30N60HS    SKW30N60HS

SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff in

Infineon
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datasheet pdf



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