No | Part number | Description ( Function ) | Manufacturers | |
1 | K30A06J3A | TK30A06J3A TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absol |
Toshiba Semiconductor |
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Recommended search results related to K30A06J3A |
Part No | Description ( Function) | Manufacturers | |
TK30A06J3A | Field Effect Transistor TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 |
Toshiba Semiconductor |
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