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2 K30A

Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET „ Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ,electronic switch. Package example: „ Absolute Maximum Ratings (Ta=25℃) Parameter Gate to Drain voltage G

1 K30A06J3A

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absol

Toshiba Semiconductor
Toshiba Semiconductor

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