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K2961 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K2961
2SK2961

2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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K29 Data sheets

Part No Description ( Function) Manufacturers PDF
K2996   2SK2996

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrigh

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
K2961    2SK2961

2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.2 Ω (t

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
K2937    2SK2937

2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Packag

Renesas Technology
Renesas Technology
datasheet pdf



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